After the Micron’s introduction of 24GB DDR5 chips, it is the turn of 32GB DDR5 and more powerful chips mass production in the first half of 2024. This progress is part of the HBM3 Gen2 memory announcement.
The 32GB DDR5 memory from Micron will be created using their cutting-edge 1β (1-beta) process, which notably does not rely on extreme ultraviolet lithography. Although Micron has not revealed the data transfer rates for these new 32-gigabit blocks, they hold the potential for developing DDR5 modules with a staggering capacity of 1TB. However, Micron plans to initially offer 128GB modules next year, showing a cautious approach to maximum capacity memory.
Regarding the HBM3 Gen2 memory, it boasts a total bandwidth of 1.2TB/s in its 8-level stack configuration. As a result, Micron designates the maximum capacity for this generation as 24GB, with 36GB schemes potentially being introduced soon. Notably, the energy efficiency of this new product has improved by 2.5 times compared to the previous generation, HBM2E.
Looking ahead, Micron's roadmap includes HBMNex memory, which is likely to be branded as HBM4. Anticipated for 2026, this next-generation memory promises to deliver an impressive bandwidth of 2+ TB/s and support capacities of up to 64GB. These advancements signify Micron's dedication to pushing the boundaries of memory technology and meeting the growing demands of computing applications.