Japanese Scientists Have Developed a Powerful New-Generation Transistor Without Silicon

Researchers at the Institute of Industrial Science at the University of Tokyo have presented a breakthrough in microelectronics, a powerful transistor based on gallium-doped indium oxide crystal. The new material replaces traditional silicon and demonstrates high efficiency in transmitting electrical signals.

Full Control With Gate-All-Around Design

The transistor is based on a gate-all-around architecture, in which the control gate completely surrounds the channel through which the current flows. This design significantly increases electron mobility and ensures long-term device stability. As lead author Dr. Anlan Chen notes, completely wrapping the gate around the channel improves scalability and efficiency compared to traditional transistors.

Defect-Free Material, Thanks to Gallium

To eliminate structural defects in indium oxide, the scientists doped it with gallium. This made it possible to obtain a more stable crystal structure capable of efficiently conducting electric current.

The team used atomic layer deposition technology: a thin film of material was applied layer by layer, one atomic layer at a time. The coating was then heat-treated to form a crystal lattice.

Performance Superior to Analogues

The new-generation metal oxide field-effect transistor (MOSFET) demonstrated electron mobility of 44.5 cm²/V·s, one of the best results among similar devices. Moreover, the transistor maintained stable operation at the applied voltage for almost three hours, demonstrating its reliability.

The Future for AI and Data Centers

The development by Japanese engineers could form the basis for the creation of compact and reliable electronic components needed for systems with high computing loads. This applies to areas such as artificial intelligence and data centers, where high density and stability of microchips are particularly important.