Intel’s ZAM Memory Technology Threatens All HBM Manufacturers
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12:17, 05.05.2026
It was recently reported that Intel and SoftBank have nearly finalised the new ZAM (Z-Angle Memory) standard. The new technology could become a major threat to all HBM manufacturers.
Key aspects of Intel’s new technology
The ZAM standard will be very similar to the new HBM4E. However, mass production of Intel’s new product will not begin anytime soon, as development will not be completed until 2028–2030 at the earliest.
Details about the new technology were unveiled at the VLSI Symposium 2026; however, despite this, the available information is quite limited. ZAM is planned to have a 9-layer structure. A single logic controller will be located on the main substrate. It is also known that the main stack will consist of 8 DRAM modules.
The technology will consist of 3 main TSV levels, which will use hybrid interconnects. The main advantage will be a higher bandwidth density of ~0.25 Tb/s/mm². Additionally, there will be lower power consumption and better heat dissipation.
ZAM supports over 9 ultra-high-density layers with TSV interconnects in each layer. The new architecture is perfectly optimised for AI-related tasks.
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