Samsung announced the start of mass production of V-NAND flash memory with 33% higher performance than the currently available. TCL V-NAND which will be launched this month will feature 1 Tbit capacity while QLC V-NAND is announced for the second half of 2024.
The bit density of the Generation 9 V-NAND is about 50% higher than one of the Generation 9 V-NAND. This is achieved with new technologies for reducing cell interference, extending cell life, and reducing the cell area through Channel Hole Etching technology.
V-NAND 9 also features a new-generation NAND Toggle 5.1 interface with up to 3.2 IOPS, which is 33% more than in the previous generation. The overall energy efficiency has been increased by 10%.
