UltraRAM: The Memory That Could Replace Both DRAM and Flash

A new kind of memory is on the verge of changing everything we know about data storage. UltraRAM, developed by Quinas Technology in partnership with chipmaker IQE plc, is transitioning from the lab to commercial production. Unlike today’s memory, UltraRAM blends the speed of DRAM with the persistence of flash. Early tests indicate that it can retain data for thousands of years, while offering endurance thousands of times greater than NAND.

The technology relies on epitaxy, a process where semiconductor layers are grown with atomic precision on a crystal base. Once these ultra-thin structures are in place, traditional chip-making techniques, such as photolithography and etching, are used to shape them into memory devices. This delicate balance of novel science and established industry methods is what makes UltraRAM scalable for mass production.

A Quantum Leap in Storage

What sets UltraRAM apart is its use of resonant tunneling, a quantum-mechanical process that allows data to be stored and retrieved without the limitations of conventional memory. The concept first drew attention in 2022, but it was previously confined to university research. Quinas has since spun out from Lancaster University and worked with IQE to refine the process for real-world manufacturing.

Quinas co-founder James Ashforth-Pook calls the recent progress a turning point, transforming a research project into a technology ready for pilot production. The next step will involve partnerships with semiconductor foundries to bring UltraRAM chips to market.

If successful, UltraRAM could erase the line between working memory and permanent storage, reshaping how computers, phones, and servers are built in the coming decade.